IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is by the BJT (Bipolar Transistor) and MOS (Insulated Gate field-effect tube) composite composed of full control voltage drive type power semiconductor devices, with high input impedance of MOSFET and GTR low conduction of the advantages of both the pressure drop.GTR has low saturation voltage and high current-carrying density, but high driving current.MOSFET drive power is small, the switch speed is fast, but the conduction pressure drop is large, the current density is small.IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage.Very suitable for dc voltage of 600V and above converter systems such as ac motor, inverter, switching power supply, lighting circuit, traction drive and other fields.

IGBT is the core device of energy transformation and transmission, commonly known as "CPU" of power electronic devices. As a national strategic emerging industry, IGBT is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment and other fields.

Generally speaking, the current flowing through IGBT module is large and the switching frequency is high, which leads to the high loss of IGBT module devices and the high temperature of devices. However, the IGBT module's poor thermal cooling will cause damage and affect the operation of the whole machine.IGBT overheating reasons may be the drive waveform is not good or excessive current or switch frequency is too high, may also be due to poor thermal cooling.